? semiconductor components industries, llc, 2016 april, 2016 ? rev. 2 1 publication order number: nvmfs4c01n/d nvmfs4c01n power mosfet 30 v, 0.67 m , 370 a, single n?channel, logic level, so?8fl features ? small footprint (5x6 mm) for compact design ? low r ds(on) to minimize conduction losses ? low q g and capacitance to minimize driver losses ? nvmfs4c01nwf ? w ettable flanks option for enhanced optical inspection ? aec?q101 qualified and ppap capable ? these devices are pb?free, halogen free/bfr free and are rohs compliant maximum ratings (t j = 25 c unless otherwise noted) parameter symbol value unit drain?to?source v oltage v dss 30 v gate?to?source v oltage v gs 20 v continuous drain cur- rent r jc (notes 1, 3) steady state t c = 25 c i d 370 a power dissipation r jc (notes 1, 3) t c = 25 c p d 161 w continuous drain cur- rent r ja (notes 1, 2, 3) steady state t a = 25 c i d 57 a power dissipation r ja (notes 1, 2, 3) t a = 25 c p d 3.84 w pulsed drain current t a = 25 c, t p = 10 s i dm 900 a operating junction and storage temperature t j , t stg ?55 to 175 c source current (body diode) i s 110 a single pulse drain?to?source avalanche energy (i l(pk) = 35 a) e as 862 mj lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. thermal resistance maximum ratings (note 1) parameter symbol value unit junction?to?case ? steady state r jc 0.93 c/w junction?to?ambient ? steady state (note 2) r ja 39 1. the entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. surface?mounted on fr4 board using a 650 mm 2 , 2 oz. cu pad. 3. maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. so?8 flat lead case 488aa style 1 marking diagram www. onsemi.com 4c01xx aywzz 1 v (br)dss r ds(on) max i d max 30 v 0.67 m @ 10 v 370 a 0.95 m @ 4.5 v g (4) s (1,2,3) n?channel mosfet d (5) s s s g d d d d device package shipping ? ordering information nvmfs4c01nt1g so?8 fl (pb?free) 1500 / tape & ree l NVMFS4C01NT3G so?8 fl (pb?free) 5000 / tape & ree l ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specification s brochure, brd8011/d. nvmfs4c01nwft1g so?8 fl (pb?free) 1500 / tape & ree l nvmfs4c01nwft3g so?8 fl (pb?free) 5000 / tape & ree l 4c01n = specific device code for nvmfs4c01n 4c01wf= specific device code of nvmfs4c01nwf a = assembly location y = year w = work week zz = lot traceabililty
nvmfs4c01n www. onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition min typ max unit off characteristics drain?to?source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 30 v drain?to?source breakdown voltage temperature coefficient v (br)dss / t j 16.3 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = 24 v t j = 25 c 1 a t j = 125 c 100 gate?to?source leakage current i gss v ds = 0 v, v gs = 20 v 100 na on characteristics (note 4) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 1.3 2.2 v negative threshold temperature coefficient v gs(th) /t j 5.8 mv/ c drain?to?source on resistance r ds(on) v gs = 10 v i d = 30 a 0.56 0.67 m v gs = 4.5 v i d = 30 a 0.76 0.95 forward transconductance g fs v ds = 3 v, i d = 30 a 183 s gate resistance r g t a = 25 c 1.0 charges and capacitances input capacitance c iss v gs = 0 v, f = 1 mhz, v ds = 15 v 10144 pf output capacitance c oss 5073 reverse transfer capacitance c rss 148 total gate charge q g(tot) v gs = 4.5 v, v ds = 15 v; i d = 30 a 63 nc threshold gate charge q g(th) 18 gate?to?source charge q gs 29 gate?to?drain charge q gd 13 total gate charge q g(tot) v gs = 10 v, v ds = 15 v, i d = 30 a 139 nc switching characteristics (note 5) turn?on delay time t d(on) v gs = 4.5 v, v ds = 15 v, i d = 15 a, r g = 3.0 29 ns rise time t r 68 turn?off delay time t d(off) 53 fall time t f 36 drain?source diode characteristics forward diode voltage v sd v gs = 0 v, i s = 10 a t j = 25 c 0.73 1.1 v t j = 125 c 0.55 reverse recovery time t rr v gs = 0 v, di s /dt = 100 a/ s, i s = 30 a 87 ns charge time t a 43 discharge time t b 44 reverse recovery charge q rr 147 nc product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 4. pulse test: pulse width 300 s, duty cycle 2%. 5. switching characteristics are independent of operating junction temperatures.
nvmfs4c01n www. onsemi.com 3 typical characteristics figure 1. on?region characteristics figure 2. transfer characteristics v ds , drain?to?source voltage (v) v gs , gate?t o?source voltage (v) figure 3. on?resistance vs. gate?to?source voltage figure 4. on?resistance vs. drain current and gate voltage v gs , gate voltage (v) i d , drain current (a) i d , drain current (a) i d , drain current (a) r ds(on) , drain?to?source resistance (m ) 2.8 v 3.0 v 3.2 v 3.4 v 3.6 v v gs = 2.6 v v ds = 3 v t j = 25 c t j = ?55 c t j = 150 c i d = 30 a r ds(on) , drain?to?source resistance (m ) t j = 25 c v gs = 10 v v gs = 4.5 v t j = 25 c 0 50 100 150 200 250 300 350 400 0.0 0.5 1.0 1.5 2.0 2.5 3.0 4.5 v 10 v 0 50 100 150 200 250 300 350 400 1.5 2 2.5 3 3.5 4 0.5 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 345678910 0.5 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0 50 100 150 200 250 300 350 400 0.6 0.6 figure 5. on?resistance variation with temperature t j , junction temperature ( c) 125 100 75 50 25 0 ?25 ?50 0.6 0.8 1.4 1.8 figure 6. drain?to?source leakage current vs. voltage v ds , drain?to?source voltage (v) r ds(on) , normalized drain?to? source resistance ( ) i dss , leakage (na) 175 1.0 1.2 1.6 v gs = 10 v i d = 30 a 150 t j = 85 c t j = 125 c t j = 100 c 10 100 1000 10000 100000 0 5 10 15 20 25 30
nvmfs4c01n www. onsemi.com 4 typical characteristics figure 7. capacitance variation v ds , drain?to?source voltage (v) 1 0.1 10 100 1k 10k 100k figure 8. gate?to?source and drain?to?source voltage vs. total charge figure 9. resistive switching time variation vs. gate resistance q g , total gate charge (nc) r g , gate resistance ( ) 140 20 0 0 1 6 12 100 10 1 0.1 10 1000 c, capacitance (pf) v gs , gate?t o?source voltage (v) t, time (ns) 10 100 100 figure 10. diode forward voltage vs. current v sd , source?to?drain voltage (v) 1.0 0.8 0.6 0.4 0.3 0.1 1 10 100 1000 i s , source current (a) q t v ds = 15 v i d = 30 a t j = 25 c q gs q gd v gs = 0 v t j = 25 c f = 1 mhz c rss c oss c iss 40 60 80 100 120 2 3 4 5 11 7 8 9 10 v ds v gs 0 6 3 18 9 12 15 v ds , drain?to?source voltage (v) v gs = 4.5 v v dd = 15 v i d = 15 a t d(off) t d(on) t r t f 0.5 0.7 0.9 t j = 25 c t j = ?55 c t j = 150 c figure 11. maximum rated forward biased safe operating area vds, drain?to?source voltage (v) 100 10 1 0.1 1 10 100 1000 i d , drain current (a) r ds(on) limit thermal limit package limit 10 s 100 s 1 ms 10 ms v gs 10 v t c = 25 c
nvmfs4c01n www. onsemi.com 5 typical characteristics figure 12. thermal impedance (junction?to?ambient) t, time (s) 0.01 0.001 0.0001 0.00001 0.000001 0.001 0.1 1 10 100 r(t) ( c/w) 0.1 1 10 100 1000 single pulse duty cycle = 0.5 0.2 0.1 0.05 0.02 0.01 0.01 r ja = steady state = 39 c/w p cb cu area = 650 mm 2 p cb cu thk = 2 oz figure 13. avalanche characteristics time in avalanche (s) 1.00e?02 1.00e?03 i peak , (a) 1.00e?04 1000 t j(initial) = 25 c t j(initial) = 100 c 100 10 1
nvmfs4c01n www. onsemi.com 6 package dimensions dfn5 5x6, 1.27p (so?8fl) case 488aa issue m style 1: pin 1. source 2. source 3. source 4. gate 5. drain m 3.00 3.40 0 ??? 3.80 12 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeter. 3. dimension d1 and e1 do not include mold flash protrusions or gate burrs. 1234 top view side view bottom view d1 e1 d e 2 2 b a 0.20 c 0.20 c 2 x 2 x dim min nom millimeters a 0.90 1.00 a1 0.00 ??? b 0.33 0.41 c 0.23 0.28 d 5.15 d1 4.70 4.90 d2 3.80 4.00 e 6.15 e1 5.70 5.90 e2 3.45 3.65 e 1.27 bsc g 0.51 0.575 k 1.20 1.35 l 0.51 0.575 l1 0.125 ref a 0.10 c 0.10 c detail a 14 l1 e/2 8x d2 g e2 k b a 0.10 b c 0.05 c l detail a a1 c 4 x c seating plane max 1.10 0.05 0.51 0.33 5.10 4.20 6.10 3.85 0.71 1.50 0.71 m *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 1.270 2x 0.750 1.000 0.905 4.530 1.530 4.560 0.495 3.200 1.330 0.965 2x 2x 4x 4x pin 5 (exposed pad) 5.00 5.30 6.00 6.30 pitch dimensions: millimeters 1 recommended e on semiconductor and the are registered trademarks of semiconductor components industries, llc (scillc) or its subsidia ries in the united states and/or other countries. scillc owns the rights to a number of pa tents, trademarks, copyrights, trade secret s, and other intellectual property. a listin g of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any product s herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any part icular purpose, nor does sci llc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typi cal? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating param eters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgic al implant into the body, or other applications intended to s upport or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer s hall indemnify and hold scillc and its officers , employees, subsidiaries, affiliates, and dist ributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufac ture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 nvmfs4c01n/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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